feb.1999 mitsubishi semiconductor triac ? BCR16CM medium power use non-insulated type, planar passivation type BCR16CM application contactless ac switches , light dimmer, electric flasher unit, hair drier, control of household equipment such as tv sets stereo refrigerator washing machine infrared kotatsu carpet electric fan, solenoid drivers, small motor control, copying machine, electric tool, other general purpose control applications ?i t (rms) ...................................................................... 16a ?v drm ..............................................................400v/600v ?i fgt ! , i rgt ! , i rgt # ......................... 30ma (20ma) ] 5 symbol v drm v dsm parameter repetitive peak off-state voltage ] 1 non-repetitive peak off-state voltage ] 1 voltage class unit v v maximum ratings 8 400 500 12 600 720 symbol i t (rms) i tsm i 2 t p gm p g (av) v gm i gm t j t stg parameter rms on-state current surge on-state current i 2 t for fusing peak gate power dissipation average gate power dissipation peak gate voltage peak gate current junction temperature storage temperature weight conditions commercial frequency, sine full wave 360 conduction, t c =100 c 60hz sinewave 1 full cycle, peak value, non-repetitive value corresponding to 1 cycle of half wave 60hz, surge on-state current typical value unit a a a 2 s w w v a c c g ratings 16 170 121 5.0 0.5 10 2 C40 ~ +125 C40 ~ +125 2.0 ] 1. gate open. type name voltage class 10.5 max 4.5 2.5 2.5 0.8 1.0 f 3.6?.2 1.3 0.5 2.6 12.5 min 3.8 max 16 max 7.0 3.2?.2 4.5 23 1 4 * 24 1 3 1
2
3
4 t 1 terminal t 2 terminal gate terminal t 2 terminal * measurement point of case temperature outline drawing dimensions in mm to-220
feb.1999 4.4 0.4 1.2 2.4 3.2 0.8 1.6 2.0 2.8 3.6 4.0 10 3 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 0 t j = 125? t j = 25? 10 0 23 5710 1 80 60 40 20 23 5710 2 44 100 120 140 160 180 200 0 maximum on-state characteristics on-state current (a) on-state voltage (v) rated surge on-state current surge on-state current (a) conduction time (cycles at 60hz) mitsubishi semiconductor triac ? BCR16CM medium power use non-insulated type, planar passivation type ] 2. measurement using the gate trigger characteristics measurement circuit. ] 3. the critical-rate of rise of the off-state commutating voltage is shown in the table below. ] 4. the contact thermal resistance r th (c-f) in case of greasing is 1.0 c/w. ] 5. high sensitivity (i gt 20ma) is also available. (i gt item 1 ) test conditions voltage class 8 12 v drm (v) 400 600 min. 10 10 commutating voltage and current waveforms (inductive load) (dv/dt) c symbol r l r l unit v/ m s 1. junction temperature t j =125 c 2. rate of decay of on-state commutat- ing current (di/dt) c =C8a/ms 3. peak off-state voltage v d =400v symbol i drm v tm v fgt ! v rgt ! v rgt # i fgt ! i rgt ! i rgt # v gd r th (j-c) (dv/dt) c parameter repetitive peak off-state current on-state voltage gate trigger voltage ] 2 gate trigger current ] 2 gate non-trigger voltage thermal resistance critical-rate of rise of off-state commutating voltage test conditions t j =125 c, v drm applied t c =25 c, i tm =25a, instantaneous measurement t j =25 c, v d =6v, r l =6 w , r g =330 w t j =25 c, v d =6v, r l =6 w , r g =330 w t j =125 c, v d =1/2v drm junction to case ] 4 unit ma v v v v ma ma ma v c/w v/ m s typ. ! @ # ! @ # electrical characteristics limits min. 0.2 ] 3 max. 2.0 1.5 1.5 1.5 1.5 30 ] 5 30 ] 5 30 ] 5 1.4 supply voltage time time time main current main voltage (di/dt)c v d (dv/dt)c performance curves
feb.1999 23 10 2 5710 3 1.6 0 23 10 ? 5710 0 23 5710 1 23 5710 2 0.8 0.6 0.4 0.2 1.0 1.2 1.4 10 0 23 10 1 5710 2 23 5710 3 23 5710 4 3 2 10 1 7 5 3 2 7 5 7 5 3 2 10 ? v gd = 0.2v p gm = 5w p g(av) = 0.5w v gm = 10v v gt = 1.5v i gm = 2a i fgt i, i rgt i, i rgt iii 10 1 10 3 7 5 3 2 ?0 ?0 20 10 2 7 5 3 2 60 100 140 4 4 ?0 0 40 80 120 typical example 10 1 10 3 7 5 3 2 ?0 ?0 20 10 2 7 5 3 2 60 100 140 4 4 ?0 0 40 80 120 i fgt i, i rgt i i rgt iii typical example 40 30 15 10 5 35 25 20 0 20 0 24 8 6 1012141618 360 conduction resistive, inductive loads 40 12 10 8 160 120 100 60 20 0 20 0 80 140 24 6141618 curves apply regardless of conduction angle 360 conduction resistive, inductive loads maximum on-state power dissipation on-state power dissipation (w) rms on-state current (a) allowable case temperature vs. rms on-state current case temperature (?) rms on-state current (a) maximum transient thermal impedance characteristics (junction to case) transient thermal impedance (?/ w) conduction time (cycles at 60hz) gate voltage (v) gate current (ma) gate trigger current vs. junction temperature junction temperature (?) gate trigger voltage vs. junction temperature junction temperature (?) gate characteristics 100 (%) gate trigger current (t j = t?) gate trigger current (t j = 25?) 100 (%) gate trigger voltage ( t j = t c ) gate trigger voltage ( t j = 25 ? ) mitsubishi semiconductor triac ? BCR16CM medium power use non-insulated type, planar passivation type
feb.1999 10 3 7 5 3 2 ?0 ?0 20 10 2 7 5 3 2 60 100 140 4 4 ?0 0 40 80 120 10 1 typical example 160 100 80 40 20 0 140 40 ?0 ?0 ?0 0 20 60 80 140 100120 60 120 typical example 140 40 ?0 ?0 ?0 0 20 60 80 100 120 10 5 7 5 3 2 10 4 7 5 3 2 10 3 7 5 3 2 10 2 typical example laching current vs. junction temperature laching current (ma) junction temperature (?) allowable ambient temperature vs. rms on-state current ambient temperature (?) rms on-state current (a) allowable ambient temperature vs. rms on-state current ambient temperature (?) rms on-state current (a) repetitive peak off-state current vs. junction temperature junction temperature (?) breakover voltage vs. junction temperature junction temperature (?) holding current vs. junction temperature junction temperature (?) 40 12 10 8 160 120 100 60 20 0 20 0 80 140 24 6141618 60 60 t2.3 120 120 t2.3 100 100 t2.3 all fins are black painted aluminum and greased natural convection 160 ?0 0 40 80 120 10 3 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 0 t 2 + , g + t 2 e , g e y t typical example t 2 + , g typical example distribution 160 120 100 60 20 0 3.2 1.6 0 0.8 1.2 2.0 2.4 2.8 40 80 140 0.4 natural convection no fins curves apply regardless of conduction angle resistive, inductive loads 100 (%) holding current ( t j = t c ) holding current ( t j = 25 ? ) 100 (%) repetitive peak off-state current ( t j = t c ) repetitive peak off-state current ( t j = 25 ? ) 100 (%) breakover voltage ( t j = t c ) breakover voltage ( t j = 25 ? ) mitsubishi semiconductor triac ? BCR16CM medium power use non-insulated type, planar passivation type
feb.1999 commutation characteristics critical rate of rise of off-state commutating voltage (v/?) rate of decay of on-state commutating current (a /ms) breakover voltage vs. rate of rise of off-state voltage rate of rise of off-state voltage (v/?) 100 (%) breakover voltage ( dv/dt = xv/? ) breakover voltage ( dv/dt = 1v/? ) gate trigger current vs. gate current pulse width gate current pulse width (?) 100 (%) gate trigger current ( tw ) gate trigger current ( dc ) 10 1 10 3 7 5 3 2 10 0 23 5710 1 10 2 7 5 3 2 23 5710 2 4 4 44 i rgt iii i rgt i i fgt i typical example 23 10 1 5710 2 23 5710 3 23 5710 4 120 0 20 40 60 80 100 140 160 # 2 # 1 typical example t j = 125? i quadrant iii quadrant 10 1 23 10 0 5710 1 23 5710 2 23 5710 3 3 2 10 2 7 5 3 2 7 5 7 5 3 2 10 0 typical example t j = 125? i t = 4a t = 500? v d = 200v f = 3hz i quadrant iii quadrant minimum charac- teristics value voltage waveform current waveform v d t (dv/dt) c i t t t (di/dt) c mitsubishi semiconductor triac ? BCR16CM medium power use non-insulated type, planar passivation type 6 w 6 w 6 w 6v 6v 6v r g r g r g a v a v a v test procedure 1 test procedure 3 test procedure 2 gate trigger characteristics test circuits
|
